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Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Shinku, 46(5), p.424 - 428, 2003/05
In order to study the reaction mechanism of the initial thermal Si(001) oxidation by O(110Pa) at the surface temperature region between 870K and 1120K, we have performed the synchrotron radiation photoemission spectroscopy of Si-2p and O-1s levels. The oxygen uptake curves as a function of the oxygen exposure time were analyzed on the basis of kinetics. The Si oxidation states corresponding to the adsorbed oxygen amount were well clarified by the time evolution of Si-2p photoemission spectra.
Yoshigoe, Akitaka; Teraoka, Yuden
Surface and Interface Analysis, 34(1), p.432 - 436, 2002/08
Times Cited Count:3 Percentile:8.63(Chemistry, Physical)no abstracts in English
Teraoka, Yuden; Yoshigoe, Akitaka
Applied Surface Science, 190(1-4), p.75 - 79, 2002/05
Times Cited Count:12 Percentile:53.16(Chemistry, Physical)no abstracts in English
Yoshigoe, Akitaka; Teraoka, Yuden
Shinku, 45(3), p.204 - 207, 2002/03
no abstracts in English
Teraoka, Yuden; Yoshigoe, Akitaka
Hyomen Kagaku, 22(8), p.530 - 536, 2001/08
no abstracts in English
Yoshigoe, Akitaka; Teraoka, Yuden
Transactions of the Materials Research Society of Japan, 26(2), p.755 - 758, 2001/06
no abstracts in English
Yoshigoe, Akitaka; Teraoka, Yuden
Atomic Collision Research in Japan, No.27, p.80 - 82, 2001/00
no abstracts in English
Teraoka, Yuden; Yoshigoe, Akitaka
Proceedings of 25th International Conference on the Physics of Semiconductors, p.321 - 322, 2000/00
no abstracts in English